3DD13003 (20-25)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 3DD13003 TRANSISTOR (NPN) FEATURES 1.BASE · power switching applications 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Value 700 Unit V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature ℃ -55~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC =5mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=2mA, IC=0 9 V Collector cut-off current ICBO VCB=700V,IE=0 1 mA Collector cut-off current ICEO VCE=400V,IB=0 0.5 mA Emitter cut-off current IEBO VEB=9V, IC=0 1 mA hFE1 VCE=5V, IC= 0.5 A 8 hFE2 VCE=5V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.25A 0.6 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.25A 1.2 V Transition frequency fT VCE=10V,Ic=100mA, f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A, VCC=100V Storage time tS DC current gain IC=250mA (UI9600) 40 5 MHz 2 0.5 µs 4 μs CLASSIFICATION OF hFE(1) Range 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 A2 B1 B2 Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs ) www.cj-elec.com 1 C,Oct,2014 Typical Characteristics Typical Characterisitics 3DD13003 hFE Static Characteristic IC VCE=5V COMMON EMITTER Ta=25℃ IB=20mA IB=18mA IB=16mA (mA) 400 Ta=100℃ 30 IC hFE IB=14mA DC CURRENT GAIN IB=12mA 300 COLLECTOR CURRENT —— 100 500 IB=10mA IB=8mA 200 IB=6mA 10 3 IB=4mA 100 Ta=25℃ IB=2mA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 1 0.01 10 IC VBEsat —— IC 1 2 (A) IC 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.3 COLLECTOR CURRENT 1 0.3 Ta=100℃ 0.1 Ta=25℃ 0.03 0.01 0.02 0.1 0.03 (V) β=4 0.05 0.3 0.1 COLLECTOR CURRENT Cob/ Cib —— 1 IC 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 0.02 3 β=4 0.05 (A) 0.1 1 0.3 COLLECTOR CURRENT VCB/ VEB PC 1000 —— IC 3 (A) Ta 2.0 f=1MHz IE=0/IC=0 Cib Ta=25℃ CAPACITANCE C (pF) COLLECTOR POWER DISSIPATION PC (W) 300 100 Cob 30 10 0.1 1.0 0.5 0.0 0.3 1 REVERSE VOLTAGE www.cj-elec.com 1.5 10 3 VR 0 20 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) C,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 3 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 C,Oct,2014